Growth of single unit-cell superconducting La2−xSrxCuO4 films

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Growth of Single Unit-Cell Superconducting La2−xSrxCuO4 Films

We have developed an approach to grow high quality ultrathin films of La2−xSrxCuO4 with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La1.9Sr0.1CuO4 film. The main result of our work is that a si...

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ژورنال

عنوان ژورنال: Solid-State Electronics

سال: 2003

ISSN: 0038-1101

DOI: 10.1016/s0038-1101(03)00191-6